Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2011-08-30
2011-08-30
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S093000, C117S098000, C117S102000, C117S105000, C438S478000
Reexamination Certificate
active
08007588
ABSTRACT:
A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
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Inada Satoshi
Ito Hideki
Moriyama Yoshikazu
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kunemund Bob M
NuFlare Technology, Inc.
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