Vapor phase growth apparatus and vapor phase growth method

Details Vapor phase growth apparatus and vapor phase growth method Vapor phase growth apparatus and vapor phase growth method

2008-03-24

2010-11-23

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S202000, C117S900000, C118S715000, C118S720000, C118S7230VE, C118S724000

Reexamination Certificate

active

07837794

ABSTRACT:
A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.

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