Use of thin SOI to inhibit relaxation of SiGe layers

Details Use of thin SOI to inhibit relaxation of SiGe layers Use of thin SOI to inhibit relaxation of SiGe layers

2006-01-24

2006-01-24

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

C117S089000, C438S689000

Reexamination Certificate

active

06989058

ABSTRACT:
High-quality, metastable SiGe alloys are formed on SOI substrates having an SOI layer of about 500 Å or less, the SiGe layers can remain substantially fully strained compared to identical SiGe layers formed on thicker SOI substrates and subsequently annealed and/or oxidized at high temperatures. The present invention thus provides a method of ‘frustrating’ metastable strained SiGe layers by growing them on thin, clean and high-quality SOI substrates.

REFERENCES:
patent: 6841457 (2005-01-01), Bendell et al.
patent: 6861158 (2005-03-01), Bedell et al.

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