Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-02-27
2000-03-21
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117101, 117102, 117902, 117939, C30B 2518
Patent
active
060398035
ABSTRACT:
A method of processing semiconductor materials, including providing a monocrystalline silicon substrate having a (001) crystallographic surface orientation; off-cutting the substrate to an orientation from about 2.degree. to about 6.degree. offset towards the [110] direction; and epitaxially growing a relaxed graded layer of a crystalline GeSi on the substrate. A semiconductor structure including a monocrystalline silicon substrate having a (001) crystallographic surface orientation, the substrate being off-cut to an orientation from about 2.degree. to about 6.degree. offset towards the [110] direction; and a relaxed graded layer of a crystalline GeSi which is epitaxially grown on the substrate.
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Fitzgerald Eugene A.
Samavedam Srikanth B.
Kunemund Robert
Massachusetts Institute of Technology
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