LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Selected: All

All

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 ! " $ ' ( ) * , - / : < = > ? @ [ \ ] ^ ` { | } ~ €

Sheet manufacturing method, sheet, sheet manufacturing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Si-doped GaAs single crystal substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

SiC device and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

SiC material, semiconductor processing equipment and method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Sic single crystal and method for growing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

SiC single crystal and method for growth thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Patent

[ 0.00 ] – not rated yet Voters 0 Comments 0

SiGeC semiconductor crystal and production method thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silica crucible with inner layer crystallizer and method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silica glass crucible

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silica glass crucible with barium-doped inner wall

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silica glass crucible with barium-doped inner wall

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide and method for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide film and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide single crystal and production thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide single-crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide sublimation systems and associated methods

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Silicon carbide substrate, and method for producing the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.

Canada

Charities
Companies
MP Candidates
Patents
Employee Salary Disclosure

World

Places of the World
Scientific Papers

United States

Banks
Companies
Counties
Patents
Employee Salary Disclosure