SiC single crystal and method for growth thereof

Details SiC single crystal and method for growth thereof SiC single crystal and method for growth thereof

1997-05-14

1999-09-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 87, 117109, 117951, 148DIG148, C30B 2306

Patent

active

059581328

ABSTRACT:
A method for the growth of a SiC single crystal comprising

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Tairov et al. "General Principles of Growing Large-Size Single Crystals of Various Silicon Carbide Polytypes", Jour. of Crystal Growth vol. 52 (1981) pp. 146-150.
Koga et al., Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, Ext. ABS. of the 17.sup.th Conf. on Solid State Materials 1985 pp. 249-252.
Data EFM-88-24, p. 24, published by Electric Science Society (Japan), Electronic Material Study Group, on Sep. 5, 1988.
Tairov et al., Journal of Crystal Growth, 36, 147-151 (1976).
Tairov et al., Journal of Crystal Growth, 43, 209-212 (1978).
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Koga et al., Vacuum, 30(11), 886-892.
Koga et al., Extended Abstracts of the 17th Conference on Solid State Devices and Materials, Tokyo, pp. 249-252 (1985).

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