Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2008-05-13
2008-05-13
Gupta, Yogendra N. (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S091000, C117S100000, C117S105000, C117S935000
Reexamination Certificate
active
10528556
ABSTRACT:
A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course of silicon carbide single crystal, a silicon raw material (22) is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.
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Oyanagi Naoki
Sakaguchi Yasuyuki
Takagi Atsushi
Gupta Yogendra N.
Malekzadeh Seyed Masoud
Showa Denko K.K.
Sughrue & Mion, PLLC
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