Si-doped GaAs single crystal substrate

Details Si-doped GaAs single crystal substrate Si-doped GaAs single crystal substrate

2007-05-08

2007-05-08

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S083000

Reexamination Certificate

active

10964819

ABSTRACT:
A Si-doped gallium arsenide single crystal substrate has a carrier concentration of 0.1×1018to 5.0×1018/cm3. The substrate is made by Vertical Bridgeman (VB) method or Vertical Gradient Freeze (VGF) method, and a minimum value and a maximum value of the carrier concentration in substrate plane are within a dispersion of 10% or less of an average carrier concentration in substrate plane.

REFERENCES:
patent: 4756792 (1988-07-01), Fujita et al.
patent: 5728212 (1998-03-01), Inoue et al.
patent: 5-70276 (1993-03-01), None
patent: 2003118078 (2003-04-01), None

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