Silicon carbide single crystal and production thereof

Details Silicon carbide single crystal and production thereof Silicon carbide single crystal and production thereof

2006-05-18

2009-06-30

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Fully-sealed or vacuum-maintained chamber

C117S084000, C117S088000, C117S100000, C117S105000, C117S951000

Reexamination Certificate

active

07553373

ABSTRACT:
A method of producing a silicon carbide single crystal, having:fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; andsublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.

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