Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
Reexamination Certificate
2006-05-23
2006-05-23
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Fully-sealed or vacuum-maintained chamber
C117S105000, C117S106000, C117S108000, C117S954000
Reexamination Certificate
active
07048798
ABSTRACT:
A method of producing a silicon carbide single crystal in which a sublimation raw material40is accommodated at the side of vessel body12in a graphite crucible10,placing a seed crystal of a silicon carbide single crystal at the side of cover body11of the graphite crucible10,the sublimation raw material40is sublimated by a first induction heating coil21placed at the side of sublimation raw material40,a re-crystallization atmosphere is form by a second induction heating coil20placed at the side of cover body11so that the sublimation raw material40sublimated by the first induction heating coil21is re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw material40is re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal60is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes.A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.
REFERENCES:
patent: 5135885 (1992-08-01), Furukawa et al.
patent: 5279701 (1994-01-01), Shigeta et al.
patent: 6428621 (2002-08-01), Vodakov et al.
patent: 6534026 (2003-03-01), Vodakov et al.
patent: 6770137 (2004-08-01), Hara et al.
patent: 1 164 211 (2001-12-01), None
patent: 05-178698 (1993-07-01), None
patent: 07-157307 (1995-06-01), None
patent: 10-101495 (1998-04-01), None
patent: 11-278985 (1999-10-01), None
patent: WO 98/33961 (1998-08-01), None
patent: WO 00/39372 (2000-07-01), None
Jun Takahashi et al., “Sublimation Growth of SiC Singe Crystalline ingots On Faces Perpendicular To The (0001) Basal Plane”; Journal of Crystal Growth 135 (1994); pp. 61-70.
International Search Report, PCT/JP01/11270.
Selder M et al., “Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport”, Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 61-62, Jul. 30, 1999 pp. 93-97.
Augustine G et al., “Growth and characterization of high-purity SiC single crystals”, Journal of Crystal Growth, North-Holland, Amsterdam, NL, vol. 211, No. 1-4, Apr. 2000, pp. 339-342.
Endo Shigeki
Maruyama Takayuki
Bridgestone Corporation
Kunemund Robert
Sughrue & Mion, PLLC
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