Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2011-03-22
2011-03-22
Song, Matthew J (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S208000, C117S213000, C117S013000, C117S900000
Reexamination Certificate
active
07909931
ABSTRACT:
The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer10ahaving a thickness of 100 μm-450 μm is formed on the inner periphery side of an initial melt line zone10which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer10bhaving a thickness of 100 μm or more and bubbles with an average diameter of 20 μm-60 μm is formed outside the above-mentioned first substantially bubble-free layer10a, and a second substantially bubble-free layer10chaving a thickness of 300 μm or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone10.
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Patent Abstracts of Japan. English Abstract and Computer translation of JP 06-092779 (1994).
Fukutani Kazuko
Kato Kazuyoshi
Kikuchi Toshiyuki
Misu Kiyoaki
Saito Ryouhei
Covalent Materials Corporation
Foley & Lardner LLP
Song Matthew J
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