Silica glass crucible

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Reexamination Certificate

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Details

C117S208000, C117S213000, C117S013000, C117S900000

Reexamination Certificate

active

07909931

ABSTRACT:
The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer10ahaving a thickness of 100 μm-450 μm is formed on the inner periphery side of an initial melt line zone10which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer10bhaving a thickness of 100 μm or more and bubbles with an average diameter of 20 μm-60 μm is formed outside the above-mentioned first substantially bubble-free layer10a, and a second substantially bubble-free layer10chaving a thickness of 300 μm or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone10.

REFERENCES:
patent: 6548131 (2003-04-01), Fabian et al.
patent: 2002/0192409 (2002-12-01), Ohama et al.
patent: 2006/0236916 (2006-10-01), Ohama
patent: 199 17 288 (2000-10-01), None
patent: 1632592 (2006-03-01), None
patent: 02-059486 (1990-02-01), None
patent: 06092779 (1994-04-01), None
patent: 2005-206446 (2005-08-01), None
patent: 2005-272178 (2005-10-01), None
Patent Abstracts of Japan. English Abstract and Computer translation of JP 06-092779 (1994).

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