Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-09-20
2005-09-20
Diamond, Alan (Department: 1753)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C136S258000, C136S256000, C136S261000, C136S249000, C257S431000, C257S466000, C117S011000, C117S041000, C117S042000, C117S047000, C117S059000, C117S060000, C117S922000, C117S931000, C117S934000, C423S348000, C427S074000, C427S162000, C427S398200, C438S097000, C438S490000, C438S488000, C438S484000
Reexamination Certificate
active
06946029
ABSTRACT:
An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
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Igarashi Kazuto
Mitsuyasu Hidemi
Nunoi Tohru
Taniguchi Hiroshi
Tsukuda Yoshihiro
Diamond Alan
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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