Apparatus and method for determining an epitaxial layer thicknes

Details Apparatus and method for determining an epitaxial layer thicknes Apparatus and method for determining an epitaxial layer thicknes

1997-06-13

1999-04-06

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 85, 117 88, 117 2, 117 96, 117928, 117835, 148 33, 148331, C30B 2906

Patent

active

058912428

ABSTRACT:
An apparatus for and a method of determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers are provided. The apparatus provides an epitaxial single crystal silicon wafer comprising an isotopically enriched doped substrate. The method involves a process of applying Second Ion Mass Spectrometry (SIMS) to the isotopically enriched doped wafer for determining its epitaxial layer thickness and transition width.

REFERENCES:
patent: 3155621 (1964-11-01), Etal
patent: 3488712 (1970-01-01), Seiter
patent: 5414259 (1995-05-01), Kingston
patent: 5604581 (1997-02-01), Liu

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