Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-05-17
2005-05-17
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S103000
Reexamination Certificate
active
06893502
ABSTRACT:
A process for the fabrication of a photonic crystal (and the crystal produced thereby) comprising producing a first beam of coherent light; generating a second and a third beam of coherent light each in a fixed phase relationship with the first beam; aligning the beams of coherent light so as to form a fixed relative angle of incidence between each pair of beams and to form an evanescent light interference pattern grid on a substrate having a first electrostatic charge; introducing into the evanescent light interference pattern grid a substance having a second electrostatic charge of an attractive nature to the first electrostatic charge; positioning the substance with the second electrostatic charge using the evanescent interference pattern grid in a planned manner on the substrate so as to form a photonic crystal. An apparatus for fabricating a photonic crystal is provided comprising a sample cell having a first electrostatic surface charge; a coherent light source operatively configured to generate a first beam of coherent light; at least one beam splitter optically coupled to the coherent light source for generating at least a second and a third beam of coherent light from the first beam of coherent light; at least one reflector in alignment with the beam splitter so as to receive the first, second and third beams of coherent light, said reflector operatively configured to align said first, second and third beams so as to form a relative angle of incidence between each pair of beams of approximately 120 degrees and to form an evanescent light interference pattern grid on said sample cell; which pattern gild can be used to position particles of a second electrostatic surface charge on the sample cell.
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Marcus Harris L.
Papadimitrakopoulos Fotios
Hiteshew Felisa
McCarter & English LLP
University of Connecticut
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