Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-11-04
1996-04-09
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117102, 117929, 427450, 118715, C30B 2514
Patent
active
055051588
ABSTRACT:
A novel apparatus and method for the cyclic growth-etch deposition of diamond on a substrate by flame chemical vapor deposition (CVD) is developed. The cyclic growth-etch diamond deposition is accomplished by placing a suitable substrate to be coated under a CVD flame and providing a disk or face plate or other shapes having one or more teeth (or holes) wherein upon rotation of the disk, or face plate, or other shape, the teeth attached to the disk, or face plate, or other shape obstruct the path of the CVD flame from contacting the substrate at a desired time scale of .tau..sub.growth and t.sub.cycle to produce high quality (FWHM of 1-3.5 cm.sup.-1) diamond.
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Thorpe, Jr. Thomas P.
Weimer Ronald A.
Kunemund Robert
McDonnell Thomas E.
Pathak Ajay S.
The United States of America as represented by the Secretary of
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