Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Patent
1994-04-07
1996-03-26
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Using an energy beam or field, a particle beam or field, or...
117928, 437245, 437105, C30B 2308
Patent
active
055011748
ABSTRACT:
Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-x) Ge.sub.x is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.
REFERENCES:
patent: 3929527 (1975-12-01), Chang et al.
patent: 4325776 (1982-04-01), Menzel
patent: 4554030 (1985-11-01), Haisma et al.
patent: 5262361 (1993-11-01), Cho et al.
Cho Chih-Chen
Liu Hung-Yu
Donaldson Richard L.
Harris James E.
Kunemund Robert
Stoltz Richard A.
Texas Instruments Incorporated
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