Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1998-09-01
2000-02-08
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117108, 117939, C30B 2300
Patent
active
06022410&
ABSTRACT:
A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.
REFERENCES:
patent: 4554045 (1985-11-01), Bean et al.
patent: 5225031 (1993-07-01), McKee et al.
Abrokwah Jonathan K.
Droopad Ravindranath
Hallmark Jerald A.
Marshall Daniel S.
Wang Jun
Champagne Donald L.
Motorola Inc.
Parsons Eugene A.
Utech Benjamin L.
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