Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2007-07-31
2007-07-31
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S088000, C117S089000, C117S091000, C117S093000, C117S099000, C117S102000, C117S105000
Reexamination Certificate
active
10384504
ABSTRACT:
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.
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Gupta Yogendra N.
Patton & Boggs LLP
Song Matt J
Sundew Technologies, LLC
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