Acicular silicon crystal and process for producing the same

Details Acicular silicon crystal and process for producing the same Acicular silicon crystal and process for producing the same

2008-07-08

2008-07-08

Kunemund, Robert (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S088000, C117S090000, C117S092000, C117S094000, C117S095000, C117S103000, C117S903000

Reexamination Certificate

active

07396409

ABSTRACT:
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.

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