Anneal of epitaxial layer in a semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S004000, C117S093000, C117S102000

Reexamination Certificate

active

07416605

ABSTRACT:
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a range of 1,000 to 1,400 degrees Celsius for a period not to exceed 100 milliseconds within 10% of the peak temperature. The anneal is performed for example with a laser anneal or a flash lamp anneal. The limited-time anneal may improve carrier mobility of a transistor.

REFERENCES:
patent: 6849527 (2005-02-01), Xiang
patent: 2006/0011984 (2006-01-01), Currie
patent: 2006/0014366 (2006-01-01), Currie
patent: 2006/0121736 (2006-06-01), Yamazaki
patent: 2006/0131665 (2006-06-01), Murphy et al.
patent: 2006/0134872 (2006-06-01), Hattendorf et al.
patent: 2006/0148143 (2006-07-01), Bedell et al.
patent: 2006066194 (2006-06-01), None
A.R. Powell, K. Eberl, F.E. Legoues, B.A. Ek, and S.S. Iyer, “Stability of strained Si1-yCy random alloy layers,” J. Vac. Sci. Technol. B 11(3), May/Jun. 1993, pp. 1064-1068.
Shuhei Yagi, Katsuya Abe, Akira Yamada, and Makoto Konagai, “C Stability in Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition,” Jpn. J. Appl. Phys. vol. 42 (2003) pp. 1499-1502.
H.J. Osten, D. Endisch, E. Bugiel, B. Dietrich, G.G. Fischer, Myeongcheol Kim, D. Kruger, and P. Zaumseil, “Strain relaxation in tensile-strained Si1-yCy layers on Si(001),” Semicond. Sci. Technol. 11 (1996) pp. 1678-1687.
Yong Jeong Kim, Tae-Joon Kim, Tae-Kyung Kim, Byungwoo Park, and Jong Han Song, “The Loss Kinetics of Substitutional Carbon in Si1-xCx Regrown by Solid Phase Epitaxy,” Jpn. J. Appl. Phys. vol. 40 (2001) pp. 773-776.
L.V. Kulik, D.A. Hits, M.W. Dashiell, and J. Kolodzey, “The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures,” Applied Physics Letters, vol. 72, No. 16, Apr. 20, 1998, pp. 1972-1974.
J.W. Strane, H.J. Stein, S.R. Lee, S.T. Picraux, J.K. Watanabe, and J.W. Mayer, “Precipitation and relaxation in strained Si1-yCy/Si heterostructures,” J. Appl. Phys., vol. 76, No. 6, Sep. 15, 1994, pp. 3656-3668.
J. Gluck, U. Konig, W. Winter, K. Brunner, K. Eberl, “Modulation-doped Si1-x-yGexCy p-type Hetero-FETs,” Elsevier Science B.V., Physica E 2—1998, pp. 768-771.
Shuhei Yagi, Katsuya Abe, Akira Yamada, and Makoto Konagai, “Substitutional C. Incorporation into Si1-yCy Alloys Using Novel Carbon Source, 1,3-Disilabutane,” Jpn. J. Appl. Phys. vol. 43, No. 7A, (2004) pp. 4153-4154.
O.G. Schmidt,—Chapter 13 “Photoluminescense and Transport” Silicon-Germanium Carbon Alloys: Growth, Properties, and Applications, edited by Sokrates T. Pantelides and Stefan Zollner, Taylor and Francis, New York, 2002, pp. 445 to 480.
O.G. Schmidt, Chapter 3, “Carbon Incorporation and Electronic Characterization” edited by Sokrates T. Pantelides and Stefan Zollner, Taylor and Francis, New York, 2002, pp. 59-89.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Anneal of epitaxial layer in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anneal of epitaxial layer in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anneal of epitaxial layer in a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4006030

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.