Anneal of epitaxial layer in a semiconductor device

Details Anneal of epitaxial layer in a semiconductor device Anneal of epitaxial layer in a semiconductor device

2007-01-08

2008-08-26

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S004000, C117S093000, C117S102000

Reexamination Certificate

active

07416605

ABSTRACT:
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a range of 1,000 to 1,400 degrees Celsius for a period not to exceed 100 milliseconds within 10% of the peak temperature. The anneal is performed for example with a laser anneal or a flash lamp anneal. The limited-time anneal may improve carrier mobility of a transistor.

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