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Ultra-shallow arsenic junction formation in silicon germanium

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate

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Undoped gate poly integration for improved gate patterning...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate

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Use of an asymmetric waveform to control ion bombardment during

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Patent

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Use of chained implants in solar cells

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate

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Using a carbon film as an etch hardmask for hard-to-etch...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate

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Using implants to lower anneal temperatures

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent

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