Using implants to lower anneal temperatures

Details Using implants to lower anneal temperatures Using implants to lower anneal temperatures

1998-08-10

2000-02-22

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438659, 438664, H01L 21425

Patent

active

060279907

ABSTRACT:
A method for lowering the anneal temperature required to form a multi-component material, such as refractory metal silicide. A shallow layer of titanium is implanted in the bottom of the contact area after the contact area is defined. Titanium is then deposited over the contact area and annealed, forming titanium silicide. A second embodiment comprises depositing titanium over a defined contact area. Silicon is then implanted in the deposited titanium layer and annealed, forming titanium silicide. A third embodiment comprises combining the methods of the first and second embodiments. In further embodiment, nitrogen, cobalt, cesium, hydrogen, fluorine, and deuterium are also implanted at selected times.

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