Use of an asymmetric waveform to control ion bombardment during

Details Use of an asymmetric waveform to control ion bombardment during Use of an asymmetric waveform to control ion bombardment during

2000-01-11

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

438798, 118723E, 118723R, 118723ER, H01L 2126, H01L 2142, H01L 21324, H01L 21477

Patent

active

061627097

ABSTRACT:
A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.

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