Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2006-03-15
2009-02-17
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C257SE21473
Reexamination Certificate
active
07491630
ABSTRACT:
A semiconductor process and apparatus uses a predetermined sequence of patterning and etching steps to etch an intrinsic polysilicon layer (26) formed over a substrate (11), thereby forming etched gates (62, 64) having vertical sidewall profiles (61, 63). While a blanket nitrogen implant (46) of the intrinsic polysilicon layer (26) may occur prior to gate etch, more idealized vertical gate sidewall profiles (61, 63) are obtained by fully doping the gates (80, 100) during the source/drain implantation steps (71, 77, 91, 97) and after the gate etch.
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Grudowski Paul A.
Hall Mark D.
Shroff Mehul D.
Stephens Tab A.
Cannatti Michael Rocco
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Smith Bradley K
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