Ultra-shallow arsenic junction formation in silicon germanium

Details Ultra-shallow arsenic junction formation in silicon germanium Ultra-shallow arsenic junction formation in silicon germanium

2007-01-16

2007-01-16

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21343

Reexamination Certificate

active

11267413

ABSTRACT:
In one aspect, the present invention provides a method of forming junctions in a silicon-germanium layer (20). In this particular embodiment, the method comprises implanting a dopant (80) into the silicon-germanium layer (20) and implanting fluorine (70) into the silicon-germanium layer (20).

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