FinFET device with reduced DIBL
FinFET structure with multiply stressed gate electrode
Formation and treatment of epitaxial layer containing...
Formation of a semiconductor substrate that may be...
Formation of a vertical junction through process simulation...
Formation of an indium retrograde profile via antimony ion...
Formation of highly activated shallow abrupt junction by...
Formation of ultra-shallow junctions by gas-cluster ion...
Formation of ultra-shallow junctions by gas-cluster ion...
Formation of ultra-shallow semiconductor junction using microwav
Front side seal to prevent germanium outgassing
Gallium nitride semiconductor device
Gas immersion laser annealing method suitable for use in the fab
Gate electrode dopant activation method for semiconductor...
Gate formation method for reduced poly-depletion and boron...
Gettering technique for wafers made using a controlled...
Hetero-integrated strained silicon n- and p-MOSFETs
Hetero-integrated strained silicon n- and p-MOSFETs
Hetero-integrated strained silicon n- and p-MOSFETs
High mobility heterojunction transistor and method