Formation of ultra-shallow junctions by gas-cluster ion...

Details Formation of ultra-shallow junctions by gas-cluster ion... Formation of ultra-shallow junctions by gas-cluster ion...

2008-07-08

2008-07-08

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S045000, C438S659000, C438S798000, C438S513000, C438S515000, C438S516000, C257SE21466

Reexamination Certificate

active

07396745

ABSTRACT:
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

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patent: 2004/0188631 (2004-09-01), None
patent: WO2004/053945 (2004-06-01), None
Isao Yamada, et al., “Materials processing by Gas Cluster Ion Beams”, Materials Sci. and Engrg. Rpts, vol. 34, pp. 231-295, Oct. 30, 2001.
USPTO Offical Communication re U.S. Appl. No. 11/150,698, dated Aug. 3, 2007.

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