Gallium nitride semiconductor device

Details Gallium nitride semiconductor device Gallium nitride semiconductor device

2011-01-04

2011-01-04

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S570000, C438S092000, C257SE21368, C257SE21359, C257SE21351

Reexamination Certificate

active

07863172

ABSTRACT:
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

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