Use of germanium dioxide and/or alloys of GeO2 with silicon...
Use of hard masks during etching of openings in integrated circu
Use of hydrogen doping for protection of low-k dielectric...
Use of implanted ions to reduce oxide-nitride-oxide (ONO)...
Use of membrane properties to reduce residual stress in an...
Use of metallocenes to inhibit copper oxidation during...
Use of nitrides for flip-chip encapsulation
Use of nitrides for flip-chip encapsulation
Use of organic spin on materials as a stop-layer for local...
Use of palladium in IC manufacturing
Use of PE-SiON or PE-Oxide for contact or via photo and for...
Use of PE-SiON or PE-OXIDE for contact or via photo and for...
Use of photoresist in substrate vias during backside grind
Use of sacrificial inorganic dielectrics for dual damascene...
Use of separate ZnTe interface layers to form OHMIC contacts to
Use of stop layer for chemical mechanical polishing of CU damasc
Use of Ta-capped metal line to improve formation of memory...
Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN
Use of titanium hydride in integrated circuit fabrication
Using implants to lower anneal temperatures