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Doping of catenated phosphorus materials

Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as
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Gallium arsenide single crystals with low dislocation density an

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Grain boundary barrier layer ceramic dielectrics and the method

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Grain boundary layer dielectric ceramic compositions

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High resistivity silicon carbide substrates for high power micro

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Indium doped gallium arsenide crystals and method of preparation

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Internal boundary layer ceramic compositions

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Luminous body

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Material compositions for transient voltage suppressors

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Method and apparatus for fabricating near spherical semiconducto

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Method of fabricating stabilized threshold switching material

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Nanostructured materials and photovoltaic devices including...

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Nitride compacts

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Optical window composition

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Organic semiconductor composition

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P-type thermoelectric materials, a process for their...

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Piezoelectric semiconductor

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Polyimide aliphatic polyester copolymers (C-2356)

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Preparation and doping of semiconducting forms of CuAlS.sub.2

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Preparation of carbonaceous semiconductor material

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