Gallium arsenide single crystals with low dislocation density an

Details Gallium arsenide single crystals with low dislocation density an Gallium arsenide single crystals with low dislocation density an

1986-05-28

1988-10-11

Doll, John

Compositions

Barrier layer device compositions

Group iii element containing binary compound; e.g., ga, as

1566202, 156607, 156605, 156DIG70, C30B 1500, C30B 1504, C30B 1520

Patent

active

047769718

ABSTRACT:
Undoped GaAs single crystals with low dislocation density, low impurity content, 0.20-1 Kg in weight and constant diameter of 1"-2" (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal in situ and subsequent growth of the single crystal.

REFERENCES:
patent: 3819421 (1974-06-01), Merkel et al.
patent: 4058429 (1977-11-01), Duncan et al.
patent: 4478675 (1984-10-01), Akai
patent: 4645560 (1987-02-01), Matsumoto et al.
Shimada et al., "Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density", Jap. J. Appl. Phys. 23(7), L441-4 1984.
Weiner et al., "Liquid Encapsulated Czochralski Growth of GaAs", J. Electrochem. Soc.: Solid State Sci., Feb. 1971 pp. 301-306.
Au Coin et al., "Liquid Encapsulated Compounding and Czochralski Growth of Semi-Insulating Gallium Arsenide", Solid State Tech., Jan. 1979, pp. 59-62, 67.
Antypas, G., "LEC Czochralski Growth of GaAs . . . ", Proceedings of the Fifth Cornell Electrical Engineering Conference, 1975, pp. 119-126.

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