Method of fabricating stabilized threshold switching material

Compositions – Barrier layer device compositions – Group vi element-containing

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252 623V, 20419225, 437 24, 357 2, H01L 2912, H01L 4500, C23C 1400

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048044903

ABSTRACT:
A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal step.

REFERENCES:
patent: 4040917 (1977-08-01), Whittingham
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4375125 (1983-03-01), Byatt
patent: 4610731 (1986-09-01), Chevallier
Smeets et al., "Passivation of Silicon p-n Junctions by Sightly Conductive Chalcogenide Films", J. Electrochem. Soc.: Solid-State Science and Technology, Sep. 1977, pp. 1458-1459.

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