Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as
Patent
1993-10-18
1997-03-18
Bonner, Melissa
Compositions
Barrier layer device compositions
Group iii element containing binary compound; e.g., ga, as
117951, 437100, 148DIG148, 148 33, 252516, 501 88, C04B 35565
Patent
active
056119550
ABSTRACT:
A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal, hydrogen, chlorine and fluorine. The selected heavy metal being a metal found in periodic groups IIIB, IVB, VB, VIB, VIIB, VIIIB, IB and IIB.
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Barrett Donovan L.
Hobgood Hudson M.
Hopkins Richard H.
McHugh James P.
Bonner Melissa
Florenzo Philip A.
Northrop Grumman Corp.
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