Preparation and doping of semiconducting forms of CuAlS.sub.2

Details Preparation and doping of semiconducting forms of CuAlS.sub.2 Preparation and doping of semiconducting forms of CuAlS.sub.2

1973-01-10

1976-01-13

Cooper, Jack

Compositions

Barrier layer device compositions

Group iii element containing binary compound; e.g., ga, as

252 623T, 252518, 2523014S, 423511, C04B 3500, H01B 110

Patent

active

039322912

ABSTRACT:
New forms of copper aluminum sulfide are semiconductors. Depending on the amount of dopant present, they are either p-type or n-type.

REFERENCES:
patent: 2814004 (1957-11-01), Goodman
Tell et al., "J. Appl. Phys.," Vol. 43, No. 5, 2469-2470 (1972).
Honeyman, "J. Phys. Chem. Solids," 30, 1935-1940 (1969).

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