Nanostructured materials and photovoltaic devices including...

Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as

Reexamination Certificate

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C136S256000, C136S261000

Reexamination Certificate

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07442320

ABSTRACT:
Nanostructured materials and photovoltaic devices including nanostructured materials are described. In one embodiment, a nanostructured material includes: (a) a first nano-network formed from a first set of nanoparticles; and (b) a second nano-network coupled to the first nano-network and formed from a second set of nanoparticles. At least one of the first set of nanoparticles and the second set of nanoparticles are formed from an indirect bandgap material. The nanostructured material is configured to absorb light to produce a first type of charge carrier that is transported in the first nano-network and a second type of charge carrier that is transported in the second nano-network. The nanostructured material has an absorption coefficient that is at least 103cm−1within a range of wavelengths from about 400 nm to about 700 nm.

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