Grain boundary barrier layer ceramic dielectrics and the method

Details Grain boundary barrier layer ceramic dielectrics and the method Grain boundary barrier layer ceramic dielectrics and the method

1980-02-08

1982-01-05

McCarthy, Helen M.

Compositions

Barrier layer device compositions

Group vi element-containing

252 623R, 428697, 427 80, 501136, H01B 108, C04B 3546, C04B 3550, H01L 2138

Patent

active

043092950

ABSTRACT:
A major amount of strontium titanate is modified with additions of lanthanide series rare earth aluminates, titanates and transition metal oxides to provide sintered semiconductive ceramics with enhanced temperature and voltage stability. The modified strontium titanate ceramic, having the general formula:

REFERENCES:
patent: 3933668 (1976-01-01), Takahashi et al.
patent: 4143207 (1979-03-01), Itakura et al.
patent: 4149173 (1979-04-01), Schmelz et al.

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