Indium doped gallium arsenide crystals and method of preparation

Details Indium doped gallium arsenide crystals and method of preparation Indium doped gallium arsenide crystals and method of preparation

1984-04-19

1986-06-10

Lacey, David L.

Compositions

Barrier layer device compositions

Group iii element containing binary compound; e.g., ga, as

156607, 156617SP, 156DIG70, 156605, C30B 1504, H01L 2914

Patent

active

045941734

ABSTRACT:
A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5.times.10.sup.19 to 3.times.10.sup.20 indium atoms per cubic centimeter incorporated into the large diameter, long single crystal. The initial melt of elemental indium, gallium, and arsenic contain about 1 atom percent of indium, and inclusion of the indium permits high yield growth of crystals with desired near stoichiometric or slightly arsenic rich composition which exhibit the desired electrical characteristics.

REFERENCES:
patent: 3401023 (1968-09-01), Mullin
patent: 3741817 (1973-06-01), Bienert et al.
patent: 4190486 (1980-02-01), Kyle
Utech et al., "Elimination of Solute Banding in Indium Antimonide Crystals by Growth in a Magnetic Field" J. of Applied Physics, v. 37, No. 9, (1966).
Terashima et al., "Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique" Jap. J. of Applied Physics, v. 22, No. 6, (1983).
Nanishi et al., "Correlation Between Dislocation Distribution and FET Perf. Observed in Low Cr Doped LEC GaAs" Jap. J. of Applied Physics, v. 22, No. 1, (1983).
Miyazawa, "Leakage Current I.sub.L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs" Jap. J. of Applied Physics, v. 21, No. 9, (1982).
J. Wagner, Preparation and Properties of Bulk In.sub.1-x Ga.sub.x As Alloys, Journal of Electrochemical Society Solid State Science, Sep. 1970, pp. 1194-1196.

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