Compositions – Barrier layer device compositions – Groups ii and vi elements containing binary compound; e.g.,...
Patent
1993-08-27
1995-02-28
Cooper, Jack
Compositions
Barrier layer device compositions
Groups ii and vi elements containing binary compound; e.g.,...
252 629, 423622, H01L 4118
Patent
active
053934440
ABSTRACT:
A piezoelectric semiconductor is a single crystal composed mainly of ZnO having properties such as electrical conductivity of 10.sup.-11 .about.10.sup.-3 1/.OMEGA..multidot.cm suitable for use as an acoustoelectric element, by adding a given amount of H.sub.2 O.sub.2 to the alkali solvent, or by using NH.sub.4 OH in the alkali solvent, or by doping the ZnO single crystal with Li or a trivalent metal. The piezoelectric semiconductor can be suitably used as a ultrasonic transducer material of acoustoelectric type and can also be used as a material for ultrasonic amplification, an surface acoustic wave filter, a piezoelectric transducer, a fluorescent material for emitting a low-velocity electron beam, etc.
REFERENCES:
"Hydrothermal Growth and Stoichiometric Assessment of ZnO Single Crystals of High Purity," Noboru Sakagami, Res. Rep. of Akita National College of Technology 23 (1988) pp. 25-29, no month.
"The Hydrothermal Growth of Low Carrier Concentration ZnO at High Water and Hydrogen Pressures," E. D. Kolb, A. S. Coriell, R. A. Laudise and A. R. Hutson (Bell Telephone Lab), Mat. Res. Bull. 2 (1967) pp. 1099-1106, no month.
"Hydrothermal Growth of Large Sound Crystals of Zinc Oxide," R. A. Laudise, E. D. Kolb, A. J. Caporaso (Bell Telephone Lab), J. Amer. Ceram. Soc. 46 (1964) pp. 9-12, no month.
Asai Yuji
Imai Osamu
Cooper Jack
NGK Insulators Ltd.
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