Method and apparatus for fabricating near spherical semiconducto

Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as

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428403, 428404, 428402, 117 3, 117 73, B32B 100, C30B 960

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061067393

ABSTRACT:
An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

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