Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as
Patent
1984-12-04
1987-12-15
Ozaki, George T.
Compositions
Barrier layer device compositions
Group iii element containing binary compound; e.g., ga, as
148 33, 2525011, 357 29, 437 2, 437 3, 437 4, 437 94, 437142, H01L 2134, H01L 2138
Patent
active
047131926
ABSTRACT:
High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.
Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.
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H. G. von Schnering et al., Angew. Chem. Int. Edit., "KP.sub.15, a New Potassium Polyphosphide", vol. 6, (1967), No. 4, p. 356.
Baumann John A.
Kuck Mark A.
Michel Christian G.
Raccah Paul M.
Schachter Rozalie
Davis IV F. Eugene
Ozaki George T.
Stauffer Chemical Company
Stone Mark P.
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