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Semiconductor component with high concentration doped zone...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile
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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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Semiconductor device having rectifying action

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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Semiconductor device having semiconductor elements formed in a r

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
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Semiconductor device including p-type silicon layer...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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Semiconductor device including p-type silicon layer...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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Semiconductor device with selectively diffused regions

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
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Semiconductor devices and method of manufacturing them

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
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Semiconductor devices that include germanium nanofilm layer...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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Semiconductor structure and method for improving its ability...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile
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Semiconductor substrate having silicon oxide layers formed betwe

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
Patent

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Semiconductor substrate of GaAs and semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile
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Silicon wafer and its manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
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Soft recovery power diode

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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Surface PIN device

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
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