Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2006-09-05
2006-09-05
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S476000, C257S483000
Reexamination Certificate
active
07102207
ABSTRACT:
A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.
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Inoue Tomoki
Ninomiya Hideaiki
Ogura Tsuneo
Sugiyama Koichi
Kabushiki Kaisha Toshiba
Nadav Ori
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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