Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile
Reexamination Certificate
2005-02-02
2010-11-23
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
Stepped profile
C257S131000
Reexamination Certificate
active
07838970
ABSTRACT:
A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.
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Niedernostheide Franz Josef
Schulze Hans-Joachim
Soelkner Gerald
Fahmy Wael M
Infineon - Technologies AG
Kalam Abul
Maginot Moore & Beck
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