Semiconductor component with high concentration doped zone...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile

Reexamination Certificate

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C257S131000

Reexamination Certificate

active

07838970

ABSTRACT:
A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.

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Egawa. H., “Avalanche Characteristics and Failure Mechanism of High Voltage Diodes”, IEEE Transactions on Electron Devices, vol. 13, 1996, pp. 754-758, (5 pages).

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