Semiconductor component with high concentration doped zone...

Details Semiconductor component with high concentration doped zone... Semiconductor component with high concentration doped zone...

2005-02-02

2010-11-23

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

Stepped profile

C257S131000

Reexamination Certificate

active

07838970

ABSTRACT:
A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.

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