Semiconductor substrate of GaAs and semiconductor device

Details Semiconductor substrate of GaAs and semiconductor device Semiconductor substrate of GaAs and semiconductor device

2011-01-25

2011-01-25

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

Stepped profile

C257S185000, C257S655000, C257SE33003, C257SE21002

Reexamination Certificate

active

07875961

ABSTRACT:
A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPxwith 0≦x≦1 and 0≦y≦1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

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