Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2008-01-08
2008-01-08
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S613000, C257S616000, C257S655000, C257SE29336
Reexamination Certificate
active
10785073
ABSTRACT:
The invention provides a semiconductor device having a pn diode that includes a p-type SiGe layer and a n-type Si layer junctioned to the p-type SiGe layer. A built-in potential of the pn diode can be reduced, and thus obtaining a diode characteristics with lower impedance compared to the conventional scheme. Further, by forming a bridge-rectifier circuit with the pn diode or the like, alternating-current voltages can efficiently be converted into direct-current voltages. Accordingly, the invention provides a semiconductor device and method of manufacturing the same that can flow a larger electrical current in the forward direction of a diode by improving the voltage-current characteristics of the diode.
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Andujar Leonardo
Quinto Kevin
Seiko Epson Corporation
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