Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity

Reexamination Certificate

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C257S458000, C257S657000

Reexamination Certificate

active

07728409

ABSTRACT:
A semiconductor device formed by decreasing thickness of a substrate by grinding, and performing ion implantation. In a diode in which a P anode layer and an anode electrode are formed at a side of a right face of an N−drift layer, and an N+cathode layer and a cathode electrode are formed at a side of a back face of the N−drift layer, an N cathode buffer layer is formed thick compared with the N+-type cathode layer between the N−-type drift layer and the N+cathode layer, the buffer layer being high in concentration compared with the N−drift layer, and low compared with the N+cathode layer. When a reverse bias voltage is applied, a depletion layer is stopped in the middle of the N cathode buffer layer, and thus prevented from reaching the N+cathode layer, so that the leakage current is suppressed.

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patent: 6441408 (2002-08-01), Porst et al.
patent: 2004/0041225 (2004-03-01), Nemoto
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patent: 2005-223301 (2005-08-01), None

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