Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2006-11-09
2010-06-01
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S458000, C257S657000
Reexamination Certificate
active
07728409
ABSTRACT:
A semiconductor device formed by decreasing thickness of a substrate by grinding, and performing ion implantation. In a diode in which a P anode layer and an anode electrode are formed at a side of a right face of an N−drift layer, and an N+cathode layer and a cathode electrode are formed at a side of a back face of the N−drift layer, an N cathode buffer layer is formed thick compared with the N+-type cathode layer between the N−-type drift layer and the N+cathode layer, the buffer layer being high in concentration compared with the N−drift layer, and low compared with the N+cathode layer. When a reverse bias voltage is applied, a depletion layer is stopped in the middle of the N cathode buffer layer, and thus prevented from reaching the N+cathode layer, so that the leakage current is suppressed.
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Fuji Electric Device Technology Co. Ltd.
Nguyen Cuong Q
Rabin & Berdo PC
Tran Trang Q
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