Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-11-09

2010-06-01

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S458000, C257S657000

Reexamination Certificate

active

07728409

ABSTRACT:
A semiconductor device formed by decreasing thickness of a substrate by grinding, and performing ion implantation. In a diode in which a P anode layer and an anode electrode are formed at a side of a right face of an N−drift layer, and an N+cathode layer and a cathode electrode are formed at a side of a back face of the N−drift layer, an N cathode buffer layer is formed thick compared with the N+-type cathode layer between the N−-type drift layer and the N+cathode layer, the buffer layer being high in concentration compared with the N−drift layer, and low compared with the N+cathode layer. When a reverse bias voltage is applied, a depletion layer is stopped in the middle of the N cathode buffer layer, and thus prevented from reaching the N+cathode layer, so that the leakage current is suppressed.

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