Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
Patent
1994-05-16
1998-03-10
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
257659, 257921, H01L 2702
Patent
active
057264880
ABSTRACT:
A semiconductor device has a well region formed in the surface of a substrate, and has functional portions such as MOSFET and bipolar transistor formed in the well region. The carrier concentration profile of the well region assumes the shape of a valley in the direction of depth thereof, and a minimum point thereof has a concentration of smaller than 5.times.10.sup.15 cm.sup.-3 and is located at a position within 1.6 .mu.m from the surface of the substrate. Preferably, the minimum point should have a concentration of greater than 5.times.10.sup.14 cm.sup.-3 but smaller than 5.times.10.sup.15 cm.sup.-3, and more preferably a concentration of greater than 1.times.10.sup.15 cm.sup.-3 but smaller than 5.times.10.sup.15 cm.sup.-3.
REFERENCES:
patent: 4032372 (1977-06-01), Vora
patent: 4247862 (1981-01-01), Klein
patent: 4258379 (1981-03-01), Watanabe et al.
patent: 4435895 (1984-03-01), Parrillo et al.
patent: 4604790 (1986-08-01), Bonn
patent: 4762802 (1988-08-01), Parrillo
patent: 4921811 (1990-05-01), Watanabe et al.
patent: 4963973 (1990-10-01), Watanabe et al.
patent: 4980744 (1990-12-01), Watanabe et al.
Weste et al., Principles of CMOS VLSI Design, 1985, Addison-Wesley, pp. 76-79.
Sze, Semiconductor Devices: Physics and Technology, 1985, John Wiley & Sons, pp. 417-420.
Hiraishi Atsushi
Ikeda Takahide
Minami Masataka
Momma Naohiro
Nagano Takahiro
Hitachi , Ltd.
Monin Donald
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