Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile
Reexamination Certificate
2005-05-03
2005-05-03
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
Stepped profile
C257S565000, C257S591000, C438S309000, C438S328000
Reexamination Certificate
active
06888226
ABSTRACT:
A semiconductor structure includes a base layer of a first conductivity type, a first layer of the first conductivity type arranged on the base layer and having a dopant concentration that is lower than a dopant concentration of the base layer, and a second layer of a second conductivity type being operative with the first layer in order to form a transition between the first conductivity type and the second conductivity type. A course of a dopant profile at the transition between the base layer and the first layer is set such that in an ESD case a space charge region shifted to the transition between the base layer and the first layer reaches into the base layer.
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Diefenbeck Klaus
Herzum Christian
Huber Jakob
Müller Karlheinz
Infineon - Technologies AG
Maginot Moore & Beck
Prenty Mark V.
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