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High speed Ge channel heterostructures for field effect devices

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High speed GE channel heterostructures for field effect devices

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High speed lateral heterojunction MISFETs realized by...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High speed optosemiconductor device having multiple quantum well

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High speed semiconductor phototransistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High Tc superconducting devices on bi-crystal substrates

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
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High temperature superconducting Josephson junctions and SQUIDs

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
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High temperature superconductor Josephson junction element...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
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High temperature superconductor/insulator composite thin films w

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent

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High voltage MOSFET having Si/SiGe heterojuction structure...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High-current avalanche-tunneling and injection-tunneling...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
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High-efficiency light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High-frequency wireless communication system on a single ultrath

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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High-frequency wireless communication system on a single ultrath

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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High-frequency wireless communication system on a single ultrath

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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High-frequency wireless communication system on a single ultrath

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Patent

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High-frequency wireless communication system on a single ultrath

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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High-speed semiconductor device with graded collector barrier

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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High-temperature SSNS and SNS Josephson junction and method of m

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
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High-temperature superconducting device and manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
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