Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-06-19
2007-06-19
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S015000, C257S020000, C257S022000, C257SE31035, C257SE31049, C257SE33009
Reexamination Certificate
active
11182671
ABSTRACT:
Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.
REFERENCES:
patent: 5846866 (1998-12-01), Huang et al.
patent: 5907173 (1999-05-01), Kwon et al.
patent: 6620688 (2003-09-01), Woo et al.
patent: 6696734 (2004-02-01), Kikuchi et al.
patent: 6828628 (2004-12-01), Hergenrother et al.
patent: 6873015 (2005-03-01), Bhattacharyya
patent: 2002/0109184 (2002-08-01), Hower et al.
patent: 2003/0062537 (2003-04-01), Sugii et al.
patent: 2005/0077511 (2005-04-01), Fitzergald
patent: 2006/0081836 (2006-04-01), Kimura et al.
patent: 2002-368230 (2002-12-01), None
patent: 2004-79887 (2004-03-01), None
patent: 2004 221543 (2004-08-01), None
patent: 20010055282 (2001-07-01), None
patent: 2002-0008789 (2002-01-01), None
patent: WO 03/019632 (2003-03-01), None
‘High Performance Power MOSFETs with Strained-Si Channel’ Cho et al. 17thInternational Symposium On Power Semiconductor Devices and ICs, May 22-26, 2005.
Cho Young Kyun
Kim Jong Dae
Kwon Sung Ku
Lee Dae Woo
Roh Tae Moon
Electronics and Telecommunications Research Institute
Fenty Jesse A.
Ladas & Parry LLP
Parker Kenneth
LandOfFree
High voltage MOSFET having Si/SiGe heterojuction structure... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage MOSFET having Si/SiGe heterojuction structure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage MOSFET having Si/SiGe heterojuction structure... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3837262